Preparation and Characterization of CCTO/PDMS Dielectric Elastomers with High Dielectric Constant and Low Dielectric Loss
نویسندگان
چکیده
منابع مشابه
High dielectric constant oxides
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...
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XUANHE ZHAO∗,†, SOO JIN ADRIAN KOH∗,‡ and ZHIGANG SUO∗,§ ∗School of Engineering and Applied Sciences Kavli Institute for Nanobio Science and Technology Harvard University, Cambridge, MA 02138 †Soft Active Materials Laboratory Department of Mechanical Engineering and Materials Science Duke University, Durham, NC 27708 ‡Institute of High Performance Computing 1 Fusionopolis Way, #16-16 Connexis S...
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ژورنال
عنوان ژورنال: Polymers
سال: 2021
ISSN: 2073-4360
DOI: 10.3390/polym13071075